Computer Memories 3: Dynamic Random-Access Memory

Computer Memories 3: Dynamic Random-Access Memory (ISTE Invoiced) book cover

Computer Memories 3: Dynamic Random-Access Memory (ISTE Invoiced)

Author(s): Philippe Darche (Author)

  • Publisher Finelybook 出版社: Wiley-ISTE
  • Publication Date 出版日期: September 8, 2026
  • Edition 版本: 1st
  • Language 语言: English
  • Print length 页数: 224 pages
  • ISBN-10: 1836691033
  • ISBN-13: 9781836691037

Book Description

Memory, the second function of a computer, has gradually become more complex in order to meet growing needs in terms of capacity, speed, security and energy efficiency. It takes the form of a component or system, such as a memory subassembly or a mass storage device.

For several decades, there has been a strong trend towards integrating memory directly into the processor under the term embedded memory, of which cache memory is a typical example. Understanding its internal mechanisms and interfacing is essential for mastering the operation of a computer and programming it efficiently.

Computer Memories 3 focuses on asynchronous dynamic random-access memory (DRAM). It examines the memory cell, then the internal organization of a generic memory, before delving into detail regarding the associated component known as DRAM. This book also presents the various access modes and advanced approaches such as embedded memory, 3D cells and capacitance-free cells.

Editorial Reviews

Editorial Reviews

About the Author

Philippe Darcheis Senior Lecturer of Computer Science at the University Institute of Technology (IUT) of Paris – Rives de Seine and a researcher in the Distributed Algorithms and Systems (DeLyS) team at LIP6, Sorbonne University, France. He is also the author of fifteen books on computer architecture.

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