Advanced Nanoscale MOSFET Architectures: Current Trends and Future Perspectives

Advanced Nanoscale MOSFET Architectures: Current Trends and Future Perspectives
by 作者: Kalyan Biswas (Editor), Angsuman Sarkar (Editor)
Publisher Finelybook 出版社: Wiley-IEEE Press
Edition: 1st
Publication Date 出版日期: 2024-06-12
Language 语言: English
Pages 页数: 336 pages
ISBN-10 书号: 1394188943
ISBN-13 书号: 9781394188949


Book Description

Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation

Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology.

The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs.

Additional topics covered include:

  • High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification
  • Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon–germanium (SiGe) FinFET and its challenges and future perspectives
  • TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications
  • Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications

Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.


From the Back Cover

Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation

Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology.

The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs.

Additional topics covered include:

  • High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification
  • Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon–germanium (SiGe) FinFET and its challenges and future perspectives
  • TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications
  • Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications

Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.


About the Author

Kalyan Biswas, PhD, is an Assistant Professor in the ECE Department at MCKV Institute of Engineering in Liluah, Howrah, WB, India.

Angsuman Sarkar, PhD, is a Professor in the ECE Department of the Kalyani Government Engineering College in Kalyani, Nadia, WB, India. He is a co-editor of the Wiley title Optical Switching: Device Technology and Applications in Networks (2022).

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