Integrated Microelectronic Devices: Physics and Modeling

Jesús A. del Alamois Donner Professor and Professor of Electrical Engineering in the Department of Electrical Engineering and Computer Science at Massachusetts Institute of Technology. He is also Director of the Microsystems Technology Laboratories at MIT. He obtained a Telecommunications Engineer degree from the Universidad Politécnica de Madrid (Spain) and MS and PhD degrees in Electrical Engineering from Stanford University. Over the years, Prof. del Alamo has been involved in research on transistors and other electronic devices in a variety of material systems. He has worked on Si solar cells, Si bipolar junction transistors, Si metal―oxide―semiconductor field-effect transistors (MOSFETs), SiGe heterostructure devices, GaAs pseudomorphic high electron mobility transistors (PHEMTs), InGaAs high electron mobility transistors (HEMTs) and MOSFETs, InGaSb HEMTs and MOSFETs, GaN HEMTs and MOSFETs, and more recently diamond MOSFETs. Prof. del Alamo teaches undergraduate and graduate-level courses at MIT in electronics, electron devices and circuits, and advanced semiconductor device physics. He has received multiple teaching and achievement awards at MIT: the 1992 Baker Memorial Award for Excellence in Undergraduate Teaching, the 1993 H. E. Edgerton Junior Faculty Achievement Award, the 2001 Louis D. Smullin Award for Excellence in Teaching, and the 2002 Amar Bose Award for Excellence in Teaching. In 2012, Prof. del Alamo was awarded the IEEE Electron Devices Society Education Award “for pioneering contributions to the development of online laboratories for microelectronics education on a worldwide scale”.